Experimental results on a fabricated transconductor chip are provided. The gain of the opamp can be tuned between 70 dB and 96 dB and high gain-bandwidth product of 145 MHz has been achieved at power consumption of less than 0.5 mW. However, the opamp, which is designed with a transresistance-transconductance architecture, was simulated with ☑.5 V supply voltage. The bandpass filter built with few transconductance blocks and capacitances was simulated with ☒.5 V supply voltage, the center frequency is tunable in the range of 30 MHz to 110 MHz. The proposed circuit architecture enables it to work with supply voltages as low as 1.1 V. The transconductance value remains constant up to frequencies beyond 500 MHz. A CMOS low voltage bandgap reference circuit is presented. HSPICE simulations show a wide tuning range of the transconductance value from 40 μS to 950 μS (500 μS) for ☒.5 V (☑.5 V) supply voltages. Use of the proposed circuit to realize tunable functions (Gm-C filter and current opamp) is illustrated. The theory of operation of this device is presented and the effects of transistor nonidealities on the global performances are investigated. The circuit consists of six MOS transistors realizing a new wideband and tunable transconductance. ![]() due to the battery life time concerns regarding implantable medical devices. International Conference on Electronics, Circuits and Systems, (Marseille. ![]() ![]() During settling time, startup circuit operation is independent from the. This paper describes a CMOS building block dedicated to high performance mixed analog-digital circuits and systems. This paper presents a novel low power, low voltage CMOS bandgap reference. Liberali, The Start-up Circuit for a Low Voltage Bandgap Reference, 21st IEEE. Band Gap Voltage Reference, Temperature Sensitivity, PSRR, Strong Inversion.
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